快科技2月12日消息,据韩国媒体报道,三星电子正在重新调整其第六代1cnm DRAM的设计,以提升良品率,确保其HBM4内存的量产。三星的1cnm DRAM自开发以来一直面临良品率问题,2024年末的试产并未达到预期效果,大规模生产准备阶段的良品率通常在60%至70%左右。为了提升良品率,三星决定调整设计,核心电路线宽保持不变,而外围电路线宽的要求则被放松,这一调整预计将显著提升良品率,确保...
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