TechInsights:2027年底DRAM预计将迈入个位数纳米技术节点

智通财经
Feb 18, 2025

智通财经APP获悉,TechInsights平台上最新发布了T1-2025 DRAM视频简报。该视频简报提供了DRAM技术的详细信息、路线图更新、趋势、比较以及前景展望。D1a和D1b是市场上的主流产品。到2027年底,TechInsights预计DRAM将迈入个位数纳米技术节点,如D0a,随后将是0b和0c世代。

2025年第一季度,市场上将首次推出D1c的一小部分产品,首先由SK海力士推出。D1c世代将在2026年和2027年占据主导地位,包括HBM4 DRAM应用。从市场角度看,HBM产品,尤其是HBM3和HBM3E,性能卓越但目前价格高昂,而传统产品如LPDDR5和DDR5器件则价格较低且性能相对较弱。

未来AI和数据中心将需要更高的单个裸晶的内存容量,例如32 Gb、48 Gb或64 Gb芯片,但目前市场上主流仍是16 Gb裸晶。在更高密度的DRAM芯片中,应开发3D DRAM架构,如4F2垂直沟道晶体管 (VCT) 单元、IGZO DRAM单元或3D堆叠DRAM单元,并在10纳米以下级别节点(个位数节点)实现产品化,尤其是三星、SK海力士和美光等主要厂商,作为下一代DRAM缩放的候选方案。

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