【TechWeb】2月20日消息,据外媒报道,三星电子副会长兼联席CEO,负责存储芯片、晶圆代工等芯片业务的设备解决方案业务部门主管全永铉(Jun Young Hyun),在上周到访了英伟达的总部。从外媒的报道来看,全永铉上周前往英伟达的总部,是有重要的业务,他携带有他们改进了设计的1b DRAM样品,1b DRAM将用于制造高带宽存储器(HBM)。1b DRAM是第五代10nm制程工艺的DRAM...
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