By Nina Kienle
IQE said it signed a joint development agreement with X-FAB to create a European-based gallium nitride power device platform solution.
The U.K. semiconductor company on Thursday said that the agreement has an initial two-year scope and is to develop a 650 volt gallium nitride device.
Gallium nitride is a material that can be used in the production of semiconductor power devices.
IQE will leverage its gallium nitride design and process expertise with X-FAB's technology development and device fabrication capabilities, it said.
The technology will also serve as a foundation for future product development to address the growing market demand for power electronics, it said.
"This collaboration provides a compelling alternative to existing supply chain models and strengthens Europe's position in next-generation power semiconductor technology," X-FAB's Chief Technology Officer Joerg Doblaski said.
Financial details weren't provided.
Write to Nina Kienle at nina.kienle@wsj.com
(END) Dow Jones Newswires
April 10, 2025 02:48 ET (06:48 GMT)
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