技术层面，英特尔18A制程在性能与密度方面也有显著进展。据称，其SRAM密度与台积电N2制程持平，并在内部相较英特尔3节点实现了明显性能飞跃。新工艺中采用了PowerVia背部供电技术，也被认为是提升能效和芯片性能的关键所在。待未来搭载18A的Panther Lake SoC正式推出后，市场将能更清晰地评估此制程的真实实力。
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