据最新消息,三星电子已经制定了在第7代10nm级DRAM内存工艺1d nm后导入VCT垂直通道晶体管技术的路线图。有望在未来2到3年内,相关产品将面世。在这个过程中,三星电子曾经在1d nm后的下一代DRAM工艺中,考虑过1e nm和VCT DRAM两种选择,最终选择了后者。在选择新的DRAM工艺方向上,三星电子进行了深入的研究和对比。在1e nm和VCT DRAM两种选择中,三星电子最终选择了...
Source Link据最新消息,三星电子已经制定了在第7代10nm级DRAM内存工艺1d nm后导入VCT垂直通道晶体管技术的路线图。有望在未来2到3年内,相关产品将面世。在这个过程中,三星电子曾经在1d nm后的下一代DRAM工艺中,考虑过1e nm和VCT DRAM两种选择,最终选择了后者。在选择新的DRAM工艺方向上,三星电子进行了深入的研究和对比。在1e nm和VCT DRAM两种选择中,三星电子最终选择了...
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