为赶超SK海力士,三星计划三年内量产V-DRAM

芯智讯
29 Apr

4月28日消息,据韩国媒体 sedaily 报导,三星电子已确定将在三年内量产被称为次世代内存的“垂直信道晶体管(VCT)DRAM”的蓝图。外界解读,三星有意比竞争对手SK海力士更早一个世代成功量产,以挽回“超级差距”的地位。VCT DRAM是指将内存单元中控制电流流动的晶体管垂直排列的产品。与传统平面方式相比,可以排列更多晶体管,实现更高容量,因此被视为潜力巨大的“游戏规则改变者”。然而,这种...

Source Link

Disclaimer: Investing carries risk. This is not financial advice. The above content should not be regarded as an offer, recommendation, or solicitation on acquiring or disposing of any financial products, any associated discussions, comments, or posts by author or other users should not be considered as such either. It is solely for general information purpose only, which does not consider your own investment objectives, financial situations or needs. TTM assumes no responsibility or warranty for the accuracy and completeness of the information, investors should do their own research and may seek professional advice before investing.

Most Discussed

  1. 1
     
     
     
     
  2. 2
     
     
     
     
  3. 3
     
     
     
     
  4. 4
     
     
     
     
  5. 5
     
     
     
     
  6. 6
     
     
     
     
  7. 7
     
     
     
     
  8. 8
     
     
     
     
  9. 9
     
     
     
     
  10. 10