LX半导体申请功率半导体器件专利,功率半导体器件性能更优

金融界
May 03, 2025

金融界2025年5月3日消息,国家知识产权局信息显示,LX 半导体科技有限公司申请一项名为“功率半导体器件”的专利,公开号 CN119907281A,申请日期为 2024 年 9 月。

专利摘要显示,提供了一种功率半导体器件、包括该功率半导体器件的功率半导体模块、功率转换器以及制造方法。该功率半导体器件可以包括基板、设置在基板上的第一导电型外延层、以及阶梯状阱结构,其中,该阶梯状阱结构的下部区域的宽度比上部区域窄,但比绝缘区或沟槽区宽。

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