上海华虹宏力申请悬浮屏蔽层制造方法专利,提高半导体器件性能

金融界
May 03, 2025

金融界2025年5月3日消息,国家知识产权局信息显示,上海华虹宏力半导体制造有限公司申请一项名为“悬浮屏蔽层的制造方法”的专利,公开号CN119905492A,申请日期为2025年1月。专利摘要显示,本发明提供了一种悬浮屏蔽层的制造方法,在衬底上形成覆盖顶层金属层的顶层金属介质层,然后对顶层金属介质层进行刻蚀,形成具有屏蔽层图案的屏蔽层凹槽并在所述屏蔽层凹槽内沉积金属屏蔽层,然后进行钝化层沉积、...

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