英诺赛科取得氮化物半导体器件专利,减少由于传统刻蚀技术带来的界面态问题

金融界
03 May

金融界 2025 年 5 月 3 日消息,国家知识产权局信息显示,英诺赛科(苏州)半导体有限公司取得一项名为“氮化物半导体器件”的专利,授权公告号 CN 222803313 U,申请日期为 2024 年 3 月。专利摘要显示,本申请涉及一种氮化物半导体器件。本申请通过在源、漏极和栅极之间设置钝化层,即将等离子体注入离子注入区内,使等离子体和离子注入区内的帽层中的杂质形成络合物,以改变帽层的掺杂状态...

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