重大突破!前ASML专家推进中国EUV光源打破西方垄断

半导体数据
01 May

4月29日,中国科学院上海光机所林楠团队在极紫外光刻(EUV)光源领域取得重大突破,成功开发出基于固体激光器的激光等离子体极紫外(LPP-EUV)光源,能量转换效率达3.42%,超越国际顶尖水平,打破西方技术垄断,为中国半导体产业叩开7纳米以下先进制程大门。EUV技术:高端芯片制造的“金钥匙”芯片是现代科技核心,EUV光刻技术是制造高端芯片的关键。其原理是利用13.5nm极紫外光,通过光刻系统将掩...

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