当地时间5月21日，纳微半导体宣布与英伟达达成战略合作，共同开发基于氮化镓（GaN）和碳化硅（SiC）技术的800V高压直流（HVDC）电源架构，该技术将率先应用于英伟达下一代AI数据中心及Rubin Ultra计算平台。图片来源：纳微半导体当前数据中心普遍采用54V低压配电系统，功率限制在几百千瓦（kW），依赖笨重的铜母线传输电力。随着AI算力需求激增，单个机架功率突破200kW时，传统架构面临...
Source Link当地时间5月21日，纳微半导体宣布与英伟达达成战略合作，共同开发基于氮化镓（GaN）和碳化硅（SiC）技术的800V高压直流（HVDC）电源架构，该技术将率先应用于英伟达下一代AI数据中心及Rubin Ultra计算平台。图片来源：纳微半导体当前数据中心普遍采用54V低压配电系统，功率限制在几百千瓦（kW），依赖笨重的铜母线传输电力。随着AI算力需求激增，单个机架功率突破200kW时，传统架构面临...
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