英诺赛科(2577.HK)一度大涨超19.5%，最高触及41港元，创月内新高。消息面上，纳微半导体宣布与英伟达合作开发下一代800伏高压直流(HVDC)架构，为包括Rubin Ultra在内的GPU提供支持的“Kyber”机架级系统供电。纳微半导体的氮化镓和碳化硅技术可在一定程度上大幅提升“Kyber”机架级系统的能效比、散热管理和系统可靠性。
而英诺赛科致力于第三代半导体硅基氮化镓(GaN-on-Si)研发与产业化，上月发布了自主开发的1200V氮化镓(GaN)产品，在高压高频场景优势显著，具备零反向恢复电荷的核心优势。此外，国金证券发布研报，首次覆盖英诺赛科并给予“买入”评级，指公司在GaN行业保持领先的三大核心优势：1)成本优势；2)产能优势；3)客户和技术优势。公司的市占率行业领先，IDM模式能够更好的实现协同作用，未来有望率先受益于GaN渗透率的提升。
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