山东汉旗科技申请多芯片MOS集成封装结构专利,提高PCB板与芯片的散热效果

金融界
Jun 02, 2025

金融界2025年6月2日消息,国家知识产权局信息显示,山东汉旗科技有限公司申请一项名为“一种多芯片MOS集成封装结构”的专利,公开号CN120072808A,申请日期为2025年02月。

专利摘要显示,本发明公开了一种多芯片MOS集成封装结构,属于芯片封装技术领域,包括,盒体,所述盒体的左侧开设有封装腔,所述封装腔内侧活动连接有承载器,所述承载器的装配槽内部安装有PCB板,所述PCB板上安装有若干组芯片,所述承载器上安装有存取组件,该多芯片MOS集成封装结构,设置有散热翅一与散热翅二能够通过固定组件工作与PCB板贴紧,从而会将PCB板与芯片工作时所散发出的热量进行吸收,散热翅一与散热翅二将热量吸收的同时风机工作时能够通过通风槽一与通风槽二之间的连通将吸收的热量排出盒体,方便散热翅一与散热翅二能够对PCB板上部与下部形成一个完整的散热通道,提高PCB板与芯片的散热效果,降低散热成本。

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