华虹宏力申请半导体存储装置制备方法专利,减少制程工艺步骤

金融界
05 Jun

金融界2025年6月5日消息,国家知识产权局信息显示,上海华虹宏力半导体制造有限公司申请一项名为“一种半导体存储装置的制备方法”的专利,公开号CN120091563A,申请日期为2025年02月。专利摘要显示,本发明提供了一种半导体存储装置的制备方法,应用于半导体制备技术领域。在本发明中,通过不设置光阻层和光罩,以对整个基底进行第一次离子注入的方式,以达到缩减形成第一阱区和第二阱区的光罩、光刻等...

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