据韩媒ETNews报道,三星电子在DRAM内存制造领域取得重大突破,率先采用干式光刻胶(Dry PR)技术,该技术将应用于其即将推出的第6代10纳米级工艺(1c nm)。目前,三星已完成干式光刻胶涂覆、显影等工序所需的多台泛林集团设备部署。与传统湿式光刻胶相比,干式光刻胶直接沉积到晶圆表面,避免了液体表面张力对图案完整性的影响,同时具备更高的曝光效率和更精细的线宽能力。三星计划将这一技术应用于其...
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