金融界2025年6月10日消息,国家知识产权局信息显示,上海理想汽车科技有限公司申请一项名为“电场钳位结构及沟槽栅晶体管”的专利,公开号CN120129284A,申请日期为2023年12月。专利摘要显示,本公开涉及半导体技术领域,尤其涉及一种电场钳位结构及沟槽栅晶体管。其中,该电场钳位结构,应用于沟槽栅晶体管,包括:多个间隔设置的PN结,PN结由层叠设置的第一掺杂区和第二掺杂区形成,相邻PN结之间...
Source Link金融界2025年6月10日消息,国家知识产权局信息显示,上海理想汽车科技有限公司申请一项名为“电场钳位结构及沟槽栅晶体管”的专利,公开号CN120129284A,申请日期为2023年12月。专利摘要显示,本公开涉及半导体技术领域,尤其涉及一种电场钳位结构及沟槽栅晶体管。其中,该电场钳位结构,应用于沟槽栅晶体管,包括:多个间隔设置的PN结,PN结由层叠设置的第一掺杂区和第二掺杂区形成,相邻PN结之间...
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