华虹半导体申请闪存器件制造方法专利,避免前层带来的刻蚀不均匀性的影响

金融界
14 Jun

金融界2025年6月14日消息,国家知识产权局信息显示,华虹半导体(无锡)有限公司申请一项名为“闪存器件的制造方法”的专利,公开号CN120152287A,申请日期为2025年03月。专利摘要显示,本发明提供一种闪存器件的制造方法,提供衬底,衬底包含存储区、载带区和外围逻辑区,在存储区和外围逻辑区上形成叠层结构,叠层结构由自下而上依次堆叠的耦合层、浮栅多晶硅层、极间介质层、控制栅多晶硅层组成;在...

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