英特尔高层表示芯片制造将减少依赖ASML高NA光刻机

爱集微
20 Jun

近日,英特尔高层罕见公开表示,未来芯片制造流程将不再以"光罩技术"为中心,而是由晶体管架构的根本性变革主导,这一言论为ASML新一代High-NA EUV光刻机的广泛应用前景蒙上阴影。根据投资研究平台Tegus分享的高层访谈内容,该英特尔主管强调,随着GAAFET(环绕闸极)与CFET(互补式FET)等新一代晶体管架构逐渐成熟,芯片制程的关键控制点将从分辨率极限的光罩工序,转向精密的蚀刻(...

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