消息称三星电子 1c 纳米 DRAM 内存良率明显提升,设计改进起到关键作用

IT之家
24 Jun

IT之家 6 月 24 日消息,参考韩媒 SEDaily 当地时间本月 19 日报道和另一家韩媒 MK 的今日报道,三星电子的第六代 10 纳米级(IT之家注:即 1c nm)DRAM 内存工艺在设计改进等的推动下良率明显提升。SEDaily 在报道中宣称,三星去年 1c nm 内存的良率还不到 30%,而在今年五月的性能测试中良率达到了 50%~70%;MK 则提到了 60% 以上的近期良率数据...

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