LX半导体申请功率半导体模块相关专利,散热柱顶表面高度可与成型件顶表面高度相同

金融界
Jun 21, 2025

金融界2025年6月21日消息,国家知识产权局信息显示,LX半导体科技有限公司申请一项名为“功率半导体模块和包括该功率半导体模块的功率转换器”的专利,公开号CN120184107A,申请日期为2024年12月。

专利摘要显示,根据实施方式的功率半导体模块可包括第一基板、接合到第一基板的功率半导体器件、接合到功率半导体器件的第二基板、接合到第二基板的散热柱、以及包围第一基板、功率半导体器件、第二基板和散热柱的成型件。此外,散热柱的顶表面可通过成型件暴露。此外,散热柱的顶表面的高度可与成型件的顶表面的高度相同。另外,散热柱可以功率半导体器件垂直重叠。

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