华虹半导体申请改善衬底背封缺陷的方法专利,避免形成弧形缺陷

金融界
12 Jul

金融界2025年7月12日消息,国家知识产权局信息显示,华虹半导体(无锡)有限公司;华虹半导体制造(无锡)有限公司申请一项名为“改善衬底背封缺陷的方法”的专利,公开号CN120299983A,申请日期为2025年03月。专利摘要显示,本申请提供一种改善衬底背封缺陷的方法,包括:步骤一,提供衬底,在背面沉积第一低温氧化物膜层;步骤二,去除位于衬底边缘区域的第一低温氧化物膜层;步骤三,形成包覆衬底和...

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