金融界2025年7月19日消息,国家知识产权局信息显示,中芯国际集成电路制造(上海)有限公司申请一项名为“测试结构及其形成方法、测试方法”的专利,公开号CN120341214A,申请日期为2024年01月。专利摘要显示,一种测试结构及其形成方法、测试方法,结构包括:基底,包括多个测试单元;相隔离的第一互连线和第二互连线,位于测试单元的基底上;第一引线,位于测试单元中第一互连线上方、并与第一互连线电...
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