HBM4,路线各不同

半导体产业纵横
Aug 11

本文由半导体产业纵横(ID:ICVIEWS)综合三星计划在其HBM4产品中使用1c DRAM,而SK海力士则计划在同一类别中采用上一代1b DRAM。在全球存储芯片行业最新战场——10纳米级第六代DRAM领域(1c、11-12纳米级)竞赛中,三星电子与SK海力士采取了截然不同的策略。为了从上一代产品的挫折中恢复过来,三星迅速采取行动,投资新的生产设施,而SK海力士则推迟大规模支出,直到在与包括...

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