三星电子第九代V9高容量QLC NAND因设计缺陷导致性能下降,大规模商用计划已推迟至2026年上半年。三星已于2024年4月开始量产V9 NAND,首批产品采用TLC(三层单元)结构,容量达1Tb;2024年9月起量产更高容量的V9 QLC(四层单元)NAND。然而,初期V9 QLC产品存在设计缺陷,影响性能表现,迫使公司延迟上市时间。目前三星在QLC领域进展滞后,旗舰QLC NAND仍停留在...
Source Link三星电子第九代V9高容量QLC NAND因设计缺陷导致性能下降,大规模商用计划已推迟至2026年上半年。三星已于2024年4月开始量产V9 NAND,首批产品采用TLC(三层单元)结构,容量达1Tb;2024年9月起量产更高容量的V9 QLC(四层单元)NAND。然而,初期V9 QLC产品存在设计缺陷,影响性能表现,迫使公司延迟上市时间。目前三星在QLC领域进展滞后,旗舰QLC NAND仍停留在...
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