中芯国际集成电路制造(北京)有限公司等半导体结构的形成方法和光电探测器专利完成登记(半导体制造专利快讯)

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Oct 03, 2025

天眼查App显示,2025-10-03,“半导体结构的形成方法和光电探测器”(patentName)正式进入专利的公布阶段。申请人为中芯国际集成电路制造(北京)有限公司,中芯国际集成电路制造(上海)有限公司,该项半导体制造专利涉及光电探测器中外延层的高精度制备技术应用场景。据专利信息显示,通过在氧化层上形成盖层以减少表面暴露,显著优化了开口清洁效果与外延生长条件,外延层岛状缺陷减少,表面平整度提升...

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