安森美（onsemi）宣布推出垂直氮化镓（vGaN）功率半导体。据介绍，对于超高压器件，安森美的垂直氮化镓（vGaN）采用GaN-on-GaN技术，使电流能够垂直流过芯片，而不是沿表面横向流动。，这一方案降低能量损耗和热量，损耗减少近50%。目前安森美向早期客户提供700V和1200V器件样品。
安森美（onsemi）宣布推出垂直氮化镓（vGaN）功率半导体。据介绍，对于超高压器件，安森美的垂直氮化镓（vGaN）采用GaN-on-GaN技术，使电流能够垂直流过芯片，而不是沿表面横向流动。，这一方案降低能量损耗和热量，损耗减少近50%。目前安森美向早期客户提供700V和1200V器件样品。
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