在氮化镓（GaN）功率器件正加速渗透AI数据中心和消费电子市场之际，功率半导体巨头安森美（onsemi）于10月30日宣布了一项重大技术突破，推出其全新架构的“垂直氮化镓（vGaN）”功率半导体。这一基于“GaN-on-GaN”（在GaN衬底上生长GaN）技术的新架构，彻底改变了传统GaN器件的电流传导方式，旨在为AI数据中心、电动汽车和可再生能源等高压应用，树立全新的效率与功率密度标杆。核心技术...
Source Link在氮化镓（GaN）功率器件正加速渗透AI数据中心和消费电子市场之际，功率半导体巨头安森美（onsemi）于10月30日宣布了一项重大技术突破，推出其全新架构的“垂直氮化镓（vGaN）”功率半导体。这一基于“GaN-on-GaN”（在GaN衬底上生长GaN）技术的新架构，彻底改变了传统GaN器件的电流传导方式，旨在为AI数据中心、电动汽车和可再生能源等高压应用，树立全新的效率与功率密度标杆。核心技术...
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