前言氮化镓自高压领域率先进入消费级快充市场以来，凭借高击穿场强、低导阻与高速开关特性，使充电器功率密度与效率实现了质的飞跃，产品体积较硅基方案缩小了一半以上，迅速成为“小体积快充”的代名词。然而，相较于高压GaN在AC-DC领域的全面普及，低压氮化镓在过去长期处于探索阶段，受制于成本与驱动兼容性等因素，难以形成规模化应用。近年来，随产能提升及生态的完善，低压GaN终于迎来发展拐点。为此，英诺赛科...
Source Link前言氮化镓自高压领域率先进入消费级快充市场以来，凭借高击穿场强、低导阻与高速开关特性，使充电器功率密度与效率实现了质的飞跃，产品体积较硅基方案缩小了一半以上，迅速成为“小体积快充”的代名词。然而，相较于高压GaN在AC-DC领域的全面普及，低压氮化镓在过去长期处于探索阶段，受制于成本与驱动兼容性等因素，难以形成规模化应用。近年来，随产能提升及生态的完善，低压GaN终于迎来发展拐点。为此，英诺赛科...
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