台积电重磅突破CFET技术!1纳米以下工艺路径明朗,2030年或将重新定义摩尔定律极限

半导体行业小报
Dec 12, 2025

在刚刚结束的IEDM 2025大会上,台积电首次公开展示了基于互补场效应晶体管(CFET)架构的集成电路运行成果,这标志着半导体行业向1纳米以下工艺节点迈出了实质性一步。台积电成功研发出全球首款全功能101级3D单片CFET环形振荡器,同时实现了全球最小的6T SRAM位单元,该技术预计将在2030年代投入实际应用。CFET通过垂直堆叠n沟道和p沟道晶体管,理论上可比当前最先进的纳米片FET技术...

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