英特尔代工展示新一代片上去耦电容器技术

天极网
Dec 16

【天极网IT新闻频道】在2025年IEEE国际电子器件大会(IEDM 2025)上,英特尔代工展示了针对AI时代系统级芯片设计的关键技术突破——下一代嵌入式去耦电容器,这一创新有望解决晶体管持续微缩过程中面临的供电瓶颈,为AI和高性能芯片提供了更稳定、更高效的电源解决方案。  电容材料创新  英特尔代工的研究人员展示了三种新型金属-绝缘体-金属(MIM)电容器材料,用于深沟槽结构:  (1)铁电铪...

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