台积电看好的终极技术

集成电路材料创...
Dec 18, 2025

根据IEDM 官方此前的预告,台积电在本届大会宣布两项了重要里程碑:首款全功能 101 级 3D 单片互补场效应晶体管 (CFET) 环形振荡器 (RO)以及全球最小的 6T SRAM 位单元,该位单元同时提供高密度和高电流设计。据介绍,基于先前基于纳米片的单片 CFET 工艺架构,台积电研究人员引入了新的集成特性,进一步将栅极间距缩小至 48nm 以下,并在相邻 FET 之间采用纳米片切割隔离 ...

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