晶盛机电近日在碳化硅(SiC)核心装备领域取得重大突破,12英寸单片式碳化硅外延生长设备顺利交付全球头部SiC外延芯片生产商瀚天天成。此次研发的12英寸单片式SiC外延设备可兼容8、12英寸SiC外延生产,其独创的垂直分流进气方案,实现了晶圆表面温度高精度闭环控制、工艺气体精确分区控制等技术,同时设备配备了自动化上/下料模块及一键自动PM辅助功能,大幅提升颗粒控制能力和维护效率。
晶盛机电近日在碳化硅(SiC)核心装备领域取得重大突破,12英寸单片式碳化硅外延生长设备顺利交付全球头部SiC外延芯片生产商瀚天天成。此次研发的12英寸单片式SiC外延设备可兼容8、12英寸SiC外延生产,其独创的垂直分流进气方案,实现了晶圆表面温度高精度闭环控制、工艺气体精确分区控制等技术,同时设备配备了自动化上/下料模块及一键自动PM辅助功能,大幅提升颗粒控制能力和维护效率。
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