近期,国产功率半导体“三线”齐传捷报:株洲中车53亿元8英寸SiC晶圆线正式通线,年增36万片产能;宁波比亚迪24万片SiC芯片技改项目通过验收,1200V沟槽栅MOSFET量产在即;东台富乐华10亿元高导热陶瓷基板项目主体封顶,180万片/年封装材料产线落地。中车中低压功率器件产业化(株洲)建设项目通线12月26日,株洲中车举行中低压功率器件产业化(株洲)建设项目通线仪式,标志着国内又一条8英寸...
Source Link近期,国产功率半导体“三线”齐传捷报:株洲中车53亿元8英寸SiC晶圆线正式通线,年增36万片产能;宁波比亚迪24万片SiC芯片技改项目通过验收,1200V沟槽栅MOSFET量产在即;东台富乐华10亿元高导热陶瓷基板项目主体封顶,180万片/年封装材料产线落地。中车中低压功率器件产业化(株洲)建设项目通线12月26日,株洲中车举行中低压功率器件产业化(株洲)建设项目通线仪式,标志着国内又一条8英寸...
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