在半导体产业持续追逐摩尔定律的征程中,混合键合(Hybrid Bonding)技术正成为突破物理极限的关键利器。随着3D NAND闪存和HBM高带宽内存的堆叠层数不断增加,传统封装技术已难以满足更高密度、更高性能的需求。混合键合通过直接将芯片与晶圆进行原子级结合,实现了前所未有的互连密度和性能提升,这项技术正从可选项变为必选项,引领半导体封装进入新时代。技术原理:从微凸块到原子级键合的跨越混合键合...
Source Link在半导体产业持续追逐摩尔定律的征程中,混合键合(Hybrid Bonding)技术正成为突破物理极限的关键利器。随着3D NAND闪存和HBM高带宽内存的堆叠层数不断增加,传统封装技术已难以满足更高密度、更高性能的需求。混合键合通过直接将芯片与晶圆进行原子级结合,实现了前所未有的互连密度和性能提升,这项技术正从可选项变为必选项,引领半导体封装进入新时代。技术原理:从微凸块到原子级键合的跨越混合键合...
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