前言在消费电子高功率密度化、AI数据中心加速扩张以及车载与工业电源不断升级的背景下,低压氮化镓正成为推动电源效率与功率密度跃升的核心器件之一。相比传统硅MOS,低压GaN具备更小导阻、更低开关损耗与更高开关频率优势,使其在快充次级DC-DC、48V轻混系统、数据中心直流电源模组、车载辅助电源与各类高频电源系统中快速渗透,市场需求呈现出持续扩张态势。为探究低压氮化镓企业分布情况,GaNFET.com...
Source Link前言在消费电子高功率密度化、AI数据中心加速扩张以及车载与工业电源不断升级的背景下,低压氮化镓正成为推动电源效率与功率密度跃升的核心器件之一。相比传统硅MOS,低压GaN具备更小导阻、更低开关损耗与更高开关频率优势,使其在快充次级DC-DC、48V轻混系统、数据中心直流电源模组、车载辅助电源与各类高频电源系统中快速渗透,市场需求呈现出持续扩张态势。为探究低压氮化镓企业分布情况,GaNFET.com...
Source LinkDisclaimer: Investing carries risk. This is not financial advice. The above content should not be regarded as an offer, recommendation, or solicitation on acquiring or disposing of any financial products, any associated discussions, comments, or posts by author or other users should not be considered as such either. It is solely for general information purpose only, which does not consider your own investment objectives, financial situations or needs. TTM assumes no responsibility or warranty for the accuracy and completeness of the information, investors should do their own research and may seek professional advice before investing.