天眼查App显示,2026-01-09,“半导体结构及其形成方法”正式进入公布阶段。申请人为中芯国际集成电路制造(北京)有限公司,中芯国际集成电路制造(上海)有限公司,该项半导体技术专利涉及光刻工艺中的对准标记结构设计与制造。据专利信息显示,通过在对准标记中设置凹槽,并依次形成透光层与不透光层,使得不透光层外形轮廓与对准标记相近似,显著优化了图形传递精度。发明人为宋孟夏;尹卓。一种半导体结构及其...
Source Link天眼查App显示,2026-01-09,“半导体结构及其形成方法”正式进入公布阶段。申请人为中芯国际集成电路制造(北京)有限公司,中芯国际集成电路制造(上海)有限公司,该项半导体技术专利涉及光刻工艺中的对准标记结构设计与制造。据专利信息显示,通过在对准标记中设置凹槽,并依次形成透光层与不透光层,使得不透光层外形轮廓与对准标记相近似,显著优化了图形传递精度。发明人为宋孟夏;尹卓。一种半导体结构及其...
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