三星加快定制HBM4E设计,预计2026年中完成,SK海力士、美光同步跟进

华尔街见闻
Jan 23

HBM竞争正快速转向深度定制化。三星计划于2026年中完成定制HBM4E设计,并采用自研2nm工艺以求突破;而SK海力士与美光则选择深度依赖台积电的先进制程进行合作。这标志着下一代AI算力的决胜关键,将取决于各公司在先进封装与制程(如2nm/3nm)上的技术路径与联盟实力。随着高带宽内存(HBM)技术竞赛进入白热化阶段,存储芯片巨头正加速向定制化HBM4E领域布局。三星电子已显著加大研发投入,预计...

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