英特尔和英特尔晶圆代工的研究人员展示了新一代去耦电容 (DCAP) 材料,可显著提升先进计算机芯片的供电性能。这项突破性成果将在 2025 年 IEEE 国际电子器件会议 (IEDM) 上发布,它利用了独特的金属-绝缘体-金属 (MIM) 材料特性。铁电氧化铪锆 (HZO) 利用其场强相关的介电响应,实现了 60 至 80 fF/μm² 的电容值;而氧化钛 (TiO) 和氧化锶钛 (STO) 则...
Source Link英特尔和英特尔晶圆代工的研究人员展示了新一代去耦电容 (DCAP) 材料,可显著提升先进计算机芯片的供电性能。这项突破性成果将在 2025 年 IEEE 国际电子器件会议 (IEDM) 上发布,它利用了独特的金属-绝缘体-金属 (MIM) 材料特性。铁电氧化铪锆 (HZO) 利用其场强相关的介电响应,实现了 60 至 80 fF/μm² 的电容值;而氧化钛 (TiO) 和氧化锶钛 (STO) 则...
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