SK海力士开发新技术降低NAND制造成本;三星研发3D堆叠结构HBM;英特尔ZAM内存单片容量达512GB

闪存市场
Feb 11

【热点速读】1、消息称SK海力士正开发新技术AIP以降低NAND制造成本2、三星电子:正在开发 zHBM,其核心是将HBM堆叠成 3D 结构3、英特尔首次展示ZAM内存原型:功耗降低一半,单片容量可达512GB4、联发科:1月营收同比、环比均下降超8%,Q1手机业务营收将明显下滑5、2月上旬韩国半导体出口同比增长137.6%,达67.3亿美元1、消息称SK海力士正开发新技术AIP以降低NAND制造...

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