IT之家 2 月 28 日消息，半导体光刻图案化的核心步骤是根据所需电路结构用光线照射涂覆在晶圆上的光刻胶，此后对于部分类型光刻胶需要进行烘烤来加速所需图案的呈现。
比利时校际微电子研究中心 imec 本月 25 日表示，在测试平台上，对于适用于 High NA EUV 等先进光刻的金属氧化物光刻胶 (MOR)，高于大气环境的氧气含量可实现更出色的烘烤放大，这意味着相同的最终效果仅需更低的光刻照射剂量，从而能缩短光刻用时、提升生产效率。
imec 在测试中使用了 50% 的氧气浓度含量，发现烘烤进程加速了 15~20%，这一趋势在商用 MOR 与模型 MOR 中均有体现，展示了优化半导体光刻全流程效率的新思路。
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