随着英伟达Vera Rubin出货节点日益临近,存储巨头围绕HBM4市场份额的霸权争夺战已然打响。三星率先亮出底牌。据ZDNet Korea近日报道,三星电子决定增大其第六代10nm级DRAM芯片的尺寸,从而同时提升DRAM和HBM4的性能。据悉,芯片尺寸的扩大能保证TSV(硅通孔)工艺的稳定性,HBM4由于I/O数量增加,需要在DRAM中设置更多的TSV孔。当三星的DRAM拥有更大的可用面积,...
Source Link随着英伟达Vera Rubin出货节点日益临近,存储巨头围绕HBM4市场份额的霸权争夺战已然打响。三星率先亮出底牌。据ZDNet Korea近日报道,三星电子决定增大其第六代10nm级DRAM芯片的尺寸,从而同时提升DRAM和HBM4的性能。据悉,芯片尺寸的扩大能保证TSV(硅通孔)工艺的稳定性,HBM4由于I/O数量增加,需要在DRAM中设置更多的TSV孔。当三星的DRAM拥有更大的可用面积,...
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