全球AI芯片巨头英伟达近期罕见地宣布直接参与内存研发,与三星电子合作推进铁电NAND闪存技术的商业化进程。这一突破性技术有望同时解决当前科技行业面临的两大核心挑战:内存芯片短缺和AI数据中心电力危机。铁电NAND技术被视为下一代存储解决方案,其独特之处在于采用铁电材料替代传统硅基芯片。这种材料无需施加外部高电压即可保持极化状态,理论上可实现高达1000层的堆叠结构,同时降低96%的功耗。在全球...
Source Link全球AI芯片巨头英伟达近期罕见地宣布直接参与内存研发,与三星电子合作推进铁电NAND闪存技术的商业化进程。这一突破性技术有望同时解决当前科技行业面临的两大核心挑战:内存芯片短缺和AI数据中心电力危机。铁电NAND技术被视为下一代存储解决方案,其独特之处在于采用铁电材料替代传统硅基芯片。这种材料无需施加外部高电压即可保持极化状态,理论上可实现高达1000层的堆叠结构,同时降低96%的功耗。在全球...
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