三星HBM规划:HBM4主导今年出货,HBM5基片升级至2纳米

华尔街见闻
6 hours ago

三星电子正加速推进下一代高带宽内存布局。在HBM4今年正式进入量产的同时,三星已将目光投向更远一代产品——计划将HBM5基片工艺从4纳米提升至2纳米,并以1d DRAM作为HBM5E的核心堆叠存储。与此同时,HBM4将占据今年三星HBM总出货量的逾半数,整体HBM产能较去年增长超过三倍。 据ETNews和韩联社报道,三星电子内存开发负责人、副总裁Hwang Sang-jun在英伟达GTC大会上披露...

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