SK海力士据报考虑采用台积电3nm工艺生产HBM4E逻辑芯片

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(来源:界面新闻)

据报道,SK海力士预计将在其HBM4E核心芯片上采用10nm级第六代(1c)DRAM工艺,而逻辑芯片则采用台积电的3nm工艺。

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