据报SK海力士正在考虑采用台积电的3nm工艺制造HBM4E逻辑芯片

金吾财讯
Mar 26

金吾财讯 | SK海力士正在积极评估是否在其第七代高带宽存储(HBM4E)的逻辑芯片上采用台积电的3nm制程,希望借此缩小与三星电子的性能差距。然而,业内分析师警告称,量产时程与成本问题可能对SK海力士的3nm计划带来不小风险。

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