周四， 联电盘初涨超7%，年内已累计上涨超118%。消息面上，联电近日宣布推出用于显示驱动IC的14nm eHV(嵌入式高压)FinFET技术平台，宣称可较其最先进的量产eHV制程(基于22nm)降低40%功耗、节省35%芯片面积。
据介绍，22nm eHV制程支持更小型、轻薄的驱动模块设计，进一步延长移动设备的电池续航，支持高阶与折叠式OLED智能手机显示应用。
周四， 联电盘初涨超7%，年内已累计上涨超118%。消息面上，联电近日宣布推出用于显示驱动IC的14nm eHV(嵌入式高压)FinFET技术平台，宣称可较其最先进的量产eHV制程(基于22nm)降低40%功耗、节省35%芯片面积。
据介绍，22nm eHV制程支持更小型、轻薄的驱动模块设计，进一步延长移动设备的电池续航，支持高阶与折叠式OLED智能手机显示应用。
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