快科技5月22日消息，据媒体报道，美国佐治亚理工学院的研究团队成功研制出一款新型NAND闪存。
该闪存不仅能够高效处理人工智能（AI）任务，还能承受太空环境中的极端辐射，其抗辐射能力达到传统NAND闪存的30倍。
这款新型闪存利用了与硅工艺兼容的氧化铪材料的铁电特性——即材料在一定温度范围内会自发产生极化，且极化方向可在外部电场作用下翻转。
这一特性使铁电材料在信息存储、传感、人工智能及新一代低功耗芯片等领域展现出广阔的应用前景。
测试结果显示，该铁电闪存可承受高达100万拉德（辐射吸收剂量）的辐射，相当于1亿次X射线照射，其辐射耐受性达传统存储器的30倍。
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