IT之家 6 月 17 日消息，据韩媒 SEDaily 当地时间 12 日消息，三星电子在 2026 年度 IEEE VLSI 研讨会上展示了全球首款 5nm MRAM（磁性随机存取存储器）的研发成果。
MRAM 结构示意
相较 DRAM，MRAM 的一大优势是其具备非易失性(Non-Volatile)，无需频繁刷新，几乎可以无限期地保留信息，从而实现了能效端的优势。
三星电子的 5nm MRAM 拥有 -40~+150 ℃ 的宽广工作环境温度范围，能满足 AEC-Q100 标准要求，正朝 2027 年量产的既定目标稳步推进。
IT之家注意到，三星电子今年早些时候在另一场学术会议上展示了 8nm MRAM，基于 8nm MRAM 的边缘 AI 芯片也在今年 5 月完成了流片。
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