【东芝推出采用最新一代工艺的80V N沟道功率MOSFET】6月30日,东芝电子元件及存储装置株式会社宣布,推出采用东芝最新一代工艺U-MOS11-H制造的80V N沟道功率MOSFET——TPM1R408RH。该MOSFET面向AI数据中心和通信基站等工业设备的开关电源。新产品即日起开始出货。
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